Interface study of hybrid CuO nanoparticles embedded ZnO nanowires heterojunction synthesized by controlled vapor deposition approach for optoelectronic devices

Fabrication of p-CuO/n-ZnO heterojunction through a vapor deposition growth hybrid CuO nanoparticles embedded ZnO nanowires for enhance optoelectronic device properties has been investigated. The controlled NWs with reasonably uniform size having an average length 1.5 ?m and diameter 40 nm was achieved using smart thermal CVD without employing any catalyst. Embedding NPs sputtering oxidation approach, good hybridization over 1D achieved. structure involved less than 10 in on the surface NWs. performance analysis reveals significantly improved photoluminescence (PL) emission crystallinity lesser intrinsic defect compared to pristine This evidently due interface interaction between construct heterojunction. I–V characteristics fabricated single nanowire at CuO/ZnO interface, measured dark by conductive nanoprobe AFM (C-AFM) ultra-high vacuum, shows rectifying behavior significant hysteresis. A remarkably p-n junction showing number charges were trapped nanoparticles/ZnO determined. indicates comparably small turn-on voltage ~0.7 eV excellent ideality factor ~1.58 under dark. band offset determined XPS found be type II structure. superior tuning optical gap defects illustrated its better formation heterojunctions can attributed alignment, high aspect ratio, These results have shown that Nanoparticles/ZnO Nanowires synthesized potential used other energy applications.